Structural properties of a-Si1 - XNx:H films grown by plasma enhanced chemical vapour deposition by SiH4 + NH3 + H2 gas mixtures

Thin Solid Films

Volumn 307, Issue 1-2, 1997, Pages 298-305

  Giorgis, F ^a   Pirri, C F ^a   Tresso, E ^a  

^a INFM   (Italy)

Author keywords

Amorphous materials; Semiconductors; Silicon nitride; Structural properties

Indexed keywords

AMMONIA; AMORPHOUS FILMS; ANNEALING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HYDROGEN; PLASMA APPLICATIONS; SILANES; SILICON NITRIDE; THERMODYNAMIC STABILITY;

ELASTIC RECOIL DETECTION ANALYSIS (ERDA); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTING FILMS;

EID: 0031247832     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00272-1     Document Type: Article

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