Influence of the target and working gas on the composition of silicon nitride thin films prepared by reactive RF-sputtering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 211, Issue 2, 2003, Pages 199-205

  Vila, M ^a   Prieto, C ^a   Garcia Lopez J ^b   Respaldiza, M A ^b  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b CENTRO NACIONAL DE ACELERADORES   (Spain)

Author keywords

Reactive sputtering; Silicon nitride thin films stoichiometry

Indexed keywords

GASES; SILICON NITRIDE; SPUTTERING; TARGETS; THIN FILMS;

REACTIVE SPUTTERING;

NUCLEAR INSTRUMENTATION;

EID: 0042283074     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01211-4     Document Type: Article

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