Remote nitridation of silicon surface by Ar/N2-fed expanding thermal plasma

Surface and Coatings Technology

Volumn 174-175, Issue , 2003, Pages 370-374

  Dinescu, G ^a   Creatore, M ^b   van de Sanden, M C M ^b  

^a NATIONAL INSTITUTE FOR LASER   (Romania)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Nitridation; Remote plasma; Silicon nitride; Silicon oxynitride

Indexed keywords

ARGON; LOW TEMPERATURE EFFECTS; NITROGEN; OXIDATION; PASSIVATION; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

NITRIDATION;

SURFACE TREATMENT;

COATING; INDUSTRIAL APPLICATION; PLASMA; SURFACE PROPERTY;

EID: 18344399814     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(03)00554-1     Document Type: Article

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