Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate dielectrics on Si

Applied Physics Letters

Volumn 85, Issue 24, 2004, Pages 5959-5961

  Okabayashi, J ^a   Toyoda, S ^a   Kumigashira, H ^a   Oshima, M ^a   Usuda, K ^b   Niwa, M ^b   Liu, G L ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); PHOTOEMISSION; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; THERMODYNAMIC STABILITY; ZIRCONIA;

GATE OXIDE THICKNESS; METALLIC CLUSTER FORMATION; PHOTOEMISSION SPECTROSCOPY; VALENCE BAND SPECTRA;

FIELD EFFECT TRANSISTORS;

EID: 20644440004     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1835001     Document Type: Article

References (20)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. H. Watanabe, Appl. Phys. Lett. 83, 4175 (2003).
3. K. Muraoka, Appl. Phys. Lett. 80, 4516 (2002).
4. T. Yamaguchi, H. Satake, N. Fukushima, and A. Toriumi, Appl. Phys. Lett. 80, 1987 (2002).
5. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2001).
6. H. Watanabe and N. Ikarashi, Appl. Phys. Lett. 80, 559 (2002).
7. J. Morais, E. B. O. da Rosa, L. Miotti, R. P. Pezzi, I. J. R. Baumvol, A. L. P. Rotondaro, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 78, 2446 (2001).
8. R. L. Opila, G. D. Wilk, M. A. Alam, R. B. van Dover, and B. W. Busch, Appl. Phys. Lett. 81, 1788 (2002).
9. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 76, 112 (2000).
10. G. B. Rayner, Jr., D. Kang, Y. Zhang, and G. Lucovsky, J. Vac. Sci. Technol. B 20, 1748 (2002).
11. J. P. Chang and Y.-S. Lin, Appl. Phys. Lett. 79, 3824 (2001).
12. M. Copel, E. Cartier, V. Narayanan, M. C. Reuter, S. Guha, and N. Bojarczuk, Appl. Phys. Lett. 81, 4227 (2002).
13. M.-H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D.-H. Ko, J. H. Lee, N. I. Lee, and K. Fujiwara, Appl. Phys. Lett. 81, 472 (2002).
14. S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, M. Niwa, K. Usuda, and N. Hirashita, J. Electron Spectrosc. Relat. Phenom. 137-140, 141 (2004).
15. R. Puthenkovilakam and J. P. Chang, Appl. Phys. Lett. 84, 1353 (2004).
16. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000).
17. C. M. Perkins, B. B. Triplett, P. C. Mclntyre, K. C. Saraswat, and E. Shero, Appl. Phys. Lett. 81, 1417 (2002).
18. S. Stemmer, Z. Chen, R. Keding, J. P. Maria, D. Wicaksana, and A. I. Kingon, J. Appl. Phys. 92, 82 (2002).
19. J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Usuda, M. Niwa, and G. L. Liu (unpublished).
20. G. D. Wilk and D. A. Muller, Appl. Phys. Lett. 83, 3984 (2003).