Heteroepitaxial growth of YSZ films on Si(100) substrate by using new metallic mode of reactive sputtering

Vacuum

Volumn 51, Issue 4, 1998, Pages 583-590

  Hata, T ^a   Nakano, S ^a   Masuda, Y ^a   Sasaki, K ^a   Haneda, Y ^b   Wasa, K ^b,c  

^a KANAZAWA UNIVERSITY   (Japan)

^b RITE 9 2 ^*  (Japan)

^c YOKOHAMA CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; EPITAXIAL GROWTH; FILM GROWTH; HYSTERESIS; MAGNETRON SPUTTERING; OXIDATION; OXYGEN; SILICON WAFERS; SPUTTER DEPOSITION; THIN FILMS; YTTRIUM COMPOUNDS;

FULL WIDTH AT HALF MAXIMUM (FWHM); REACTIVE SPUTTERING; YTTRIA;

ZIRCONIA;

EID: 0032310832     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00251-6     Document Type: Article

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