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Applied Physics Letters

Volumn 84, Issue 5, 2004, Pages 678-680

Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation

(10) Cho, M H a Moon, D W a Park, S A b Rho, Y S b Kim, Y K b Jeong, K b Chang, C H c Gu, J H d Lee, J H d Choi, S Y d

a Korea Research Institute of Standards and Science (South Korea)

b Yonsei University (South Korea)

c Research Institute of Industrial Science and Technology (RIST) (South Korea)

d SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DEFORMATION; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; MOS DEVICES; OXIDATION; PERMITTIVITY; SOLUBILITY; STOICHIOMETRY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM COMPOUNDS;

BAND GAPS; CHEMICAL SHIFTS; STRUCTURAL STABILITY;

GADOLINIUM COMPOUNDS;

EID: 10744226785 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1644047 Document Type: Article

Times cited : (8)

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