The Influence of Buffer Layer Growth Parameters on the Microstructure and Surface Morphology of GaN on Sapphire Substrates Correlated with in-situ Reflectivity

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 2, 2001, Pages 641-645

  Wood, D A ^a   Parbrook, P J ^a   Lynch, R J ^a   Lada, M ^a   Cullis, A G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013128641     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<641::AID-PSSA641>3.0.CO;2-N     Document Type: Article

References (8)

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7. H. MARCHAND, J. P, IBBETSON, P. T. FINI, P. KOZODOY, S. KELLER, S. DENBAARS, J. S. SPECK, and U. K. MISHRA, MRS Internet J. Nitride Semicond. Res. 3, 3 (1998).
8. X. H. WU, C. R. ELSASS, A. ABARE, M. MACK, S. KELLER, P. M. PETROFF, S. P. DENBAARS, J. S. SPECK, and S. J. ROSNER, Appl. Phys. Lett. 72, 6 (1988).