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Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 142-148

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

(7) Stafford, A a Irvine, S J C a Bougrioua, Z b Jacobs, K b Moerman, I b Thrush, E J c Considine, L c

a GLYNDWR UNIVERSITY (United Kingdom)

b GHENT UNIVERSITY (Belgium)

c Thomas Swan Sci Equipment Ltd (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFEROMETRY; LASER APPLICATIONS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; RECRYSTALLIZATION (METALLURGY); SENSITIVITY ANALYSIS; SURFACE ROUGHNESS; THIN FILMS;

EPILAYERS; LASER INTERFEROMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034499887 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00674-6 Document Type: Article

Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.