Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

Journal of Crystal Growth

Volumn 254, Issue 3-4, 2003, Pages 348-352

  Chen, J ^a,b   Zhang, S M ^a   Zhang, B S ^a   Zhu, J J ^a   Feng, G ^a   Shen, X M ^a   Wang, Y T ^a   Yang, H ^a   Zheng, W C ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SICHUAN UNIVERSITY   (China)

Author keywords

A1. In situ laser reflectometry; A1. Lateral overgrowth; A3. Metalorganic chemical vapor deposition; B1. GaN

Indexed keywords

ANNEALING; COALESCENCE; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LATERAL OVERGROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037809432     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01235-1     Document Type: Article

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