Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Solid State Communications

Volumn 129, Issue 1, 2004, Pages 63-68

  Tyschenko, I E ^a   Talochkin, A B ^a   Cherkov, A G ^a   Zhuravlev, K S ^a   Yankov, R A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b Nanoparc GmbH   (Germany)

Author keywords

A. Semiconductors; B. Nanofabrications; D. Optical properties; E. Luminescence; E. Strain, high pressure

Indexed keywords

ANNEALING; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL TRANSITIONS;

SEMICONDUCTING GERMANIUM;

EID: 0242406803     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2003.09.015     Document Type: Article

References (18)

1. Takagahara T., Takeda K. Phys. Rev. B. 46:1992;15578.
2. Maeda Y. Phys. Rev. B. 51:1995;1658.
3. Mo Y.-W., Savage D.E., Swartzentruber B.S., Lagally M.G. Phys. Rev. Lett. 65:1990;1020.
4. Grundman M., Stier O., Bimberg D. Phys. Rev. B. 52:1995;11969.
5. Yue L., He Y. J. Appl. Phys. 81:1997;2910.
6. Atwater H.A., Shcheglov K.V., Wong S.S., Vahala K.J., Flagan R.C., Brongersma M.L., Polman A. Mater. Res. Soc. Symp. Proc. 321:1994;363.
7. Hayashi S., Kanazawa J., Takaoka M., Nagareda T., Yamamoto K. Z. Phys. D. 1993;144.
8. Ma S.Y., Ma Z.C., Zong W.H., Han H.X., Wang Z.P., Li G.H., Qin G., Qin G.G. J. Appl. Phys. 84:1998;559.
9. Kachurin G.A., Rebohle L., Tyschenko I.E., Volodin V.A., Voelskow M., Skorupa W., Fröb H. Semiconductors. 34:2000;23.
10. Tyschenko I.E., Rebohle L., Yankov R.A., Skorupa W., Misiuk A. Appl. Phys. Lett. 73:1998;1418.
11. Tyschenko I.E., Zhuravlev K.S., Vandyshev E., Misiuk A., Rebohle L., Skorupa W., Yankov R.A., Popov V.P. Opt. Mater. 17:2001;99.
12. Rebohle L., von Borany J., Yankov R.A., Skorupa W., Tyschenko I.E., Fröb H., Leo K. Appl. Phys. Lett. 71:1997;2809.
13. Cerdeira F., Buchenauer C.J., Pollak F.H., Cardona M. Phys. Rev. B. 5:1972;580.
14. Quin L., Teo K.L., Shen Z.X., Peng C.S., Zhou J.M. Phys. Rev. B. 64:2001;075312.
15. Renucci M.A., Renucci J.B., Zeyher R., Cardona M. Phys. Rev. B. 10:1974;4309.
16. Teo K.L., Kwok S.N., Yu P.Y., Guha S. Phys. Rev. B. 62:2000;1584.
17. Zallen R., Paul W. Phys. Rev. 155:1967;703.
18. Wilcoxon J.P., Provencio P.P., Samara G.A. Phys. Rev. B. 64:2001;035417.