Synthesis of wide band gap nanocrystals by ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 191, Issue 1-4, 2002, Pages 447-451

  Borsella, E ^a   De Julian Fernandez C ^a   Garcia M A ^a   Mattei, G ^a   Maurizio, C ^a   Mazzoldi, P ^a   Padovani, S ^a   Sada, C ^a   Battaglin, G ^b   Cattaruzza, E ^b   Gonella, F ^b   Quaranta, A ^c   D'Acapito F ^d   Tagliente, M A ^e   Tapfer, L ^e  

^a UNIVERSITY OF PADOVA   (Italy)

^b INFM   (Italy)

^c UNIVERSITY OF TRENTO   (Italy)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^e Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

Gallium nitride; Indium oxide; Ion implantation; Nanocomposites

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ENERGY GAP; ION IMPLANTATION; PHOTOLUMINESCENCE; SUBSTRATES; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

DIELECTRIC SUBSTRATES;

NANOSTRUCTURED MATERIALS;

EID: 0036574333     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00590-6     Document Type: Article

References (9)