Effect of low-temperature annealing on the luminescent lifetime and negative differential resistance of silicon-implanted borosilicate glass

Journal of Applied Physics

Volumn 94, Issue 12, 2003, Pages 7542-7546

  Lin, Gong Ru ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTALLIZATION; DEFECTS; DIODES; ELECTRIC FIELDS; ELECTRON TUNNELING; ION IMPLANTATION; LEAKAGE CURRENTS; NEGATIVE RESISTANCE; PHOTOLUMINESCENCE; SEMICONDUCTOR JUNCTIONS; SILICON; X RAY DIFFRACTION ANALYSIS;

CONTACT RESISTANCES; NEGATIVE DIFFERENTIAL RESISTANCE (NDR);

BOROSILICATE GLASS;

EID: 0348195937     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1630366     Document Type: Article

References (25)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).
2. K. D. Hirschman, L. Tsybeskov, S. D. Duttagupta, and P. M. Fauchet, Nature (London) 384, 338 (1996).
3. Y. Kanemitsu, Phys. Rep. 263, 1 (1995).
4. M. L. Brongersma, K. S. Min, E. Boer, T. Tambo, A. Polman, and H. A. Atwater, Mater. Res. Soc. Symp. Proc. 486, 275 (1998).
5. S. Hayashi, T. Nagareda, Y. Kanzawa, and K. Yamamoto, Jpn. J. Appl. Phys., Part 1 32, 3840 (1993).
6. L. Rebohle, J. Borany, R. A. Yankov, W. Skorupa, I. E. Tyschenko, H. Frob, and K. Leo, Appl. Phys. Lett. 71, 2809 (1997).
7. G. H. Li, K. Ding, Y. Chen, H. X. Han, and Z. P. Wang, J. Appl. Phys. 88, 1439 (2001).
8. H. Z. Song, X. M. Bao, N. S. Li, and J. Y. Zhang, J. Appl. Phys. 82, 4028 (1997).
9. J. Gazecki, J. M. Kubica, M. Zamora, G. K. Reeves, C. M. Johnson, and M. C. Ridgway, Thin Solid Films 340, 233 (1999).
10. M. Y. Hao, H. Hwang, and J. C. Lee, Appl. Phys. Lett. 62, 1530 (1993).
11. E. Kameda, T. Matsuda, Y. Emura, and T. Ohzone, Solid-State Electron. 42, 2105 (1998).
12. A. Kalnitsky, A. R. Boothroyd, and J. P. Ellul, Solid-State Electron. 33, 893 (1990).
13. R. D. Gould and M. G. Lopez, Thin Solid Films 343-344, 94 (1999).
14. M. C. Rossi, S. Salvatori, M. Burchielli, and G. Conte, Thin Solid Films 383, 267 (2001).
15. A. I. Yakimov, N. P. Stepina, and A. V. Dvurechenskii, J. Phys.: Condens. Matter 6, 2583 (1994).
16. E. Lampin, C. Delerue, M. Lannoo, and G. Allan, Phys. Rev. B 58, 12044 (1998).
17. M. G. Lopez and R. D. Gould, Thin Solid Films 254, 291 (1995).
18. S.-J. Wang, J.-C. Lin, and H. Y. Tsai, Electron. Lett. 32, 1618 (1996).
19. M.-K. Lee, C.-H. Chu, Y.-C. Tseng, J.-M. Shyr, and C.-H. Kao, IEEE Electron Device Lett. 21, 587 (2000).
20. Q. Wan, N. L. Zhang, X. Y. Xie, T. H. Wang, and C. L. Lin, Appl. Surf. Sci. 191, 171 (2002).
21. G. Y. Xu, M. Liu, X. S. Wu, Y. L. He, and T. M. Wang, J. Phys.: Condens. Matter 11, 8594 (1999).
22. L. Tsybeskov et al., Europhys. Lett. 55, S52 (2001).
23. G.-R. Lin, Jpn. J. Appl. Phys., Part 2 41, L1379 (2002).
24. O. Pinaud, J. Appl. Phys. 92, 1987 (2002).
25. E. Alekseev and D. Pavlidis, Solid-State Electron. 44, 941 (2002).