Electrical properties of Pt/SrBi2Ta2O9/CeO2/SiO 2/Si structure for nondestructive readout memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4373-4376

  Shin, Dong Suk ^a,b   Lee, Ho Nyung ^a   Kim, Yong Tae ^a   Choi, In Hoon ^b   Kim, Byong Ho ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

CeO2; Coercive field; Ferroelectric; Memory window; MFIS; SrBi2Ta2O9

Indexed keywords

COERCIVE FORCE; FERROELECTRIC DEVICES; LEAKAGE CURRENTS;

MEMORY WINDOWS;

NONDESTRUCTIVE READOUT;

EID: 0032131319     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4373     Document Type: Article

References (12)

1. Y. Tarui: Tech. Dig. IEDM (1994) p. 7.
2. W. Kinney: Integrat. Ferroelectr. 4 (1994) 131.
3. B. M. Melnick, J. Gregory, and C. A. Paz-de Araujo: Integrat. Ferroelectr. 11 (1995) 145.
4. T. Nakamura, Y. Nakao, A. Kamisawa and H. Takasu: Integral. Ferroelectr. 11 (1995) 161.
5. Y. T. Kim and C. W. Lee: Jpn. J. Appl. Phys. 35 (1996) 6153.
6. T. Nakamura, Y. Nakao, A. Kamisawa and H. Takasu: Appl. Phys. Lett. 65 (1994) 1522.
7. E. Tokumitsu, K. Itani, B.K. Moon and H. Ishiwara: Jpn. J. Appl. Phys. 34 (1995) 5202.
8. T. Hirai, K. Teramoto, K. Nagashima, H. Koike and Y. Tarui: Jpn. J. Appl. Phys. 34 (1995) 4163.
9. K. Nagashima, T. Hirai, H. Koike, Y. Fujisaki and Y. Tarui: Jpn. Appl. Phys. 35 (1996) L1680.
10. T. Hirai Y. Fujisaki, K. Nagashima, H. Koike and Y. Tarui: Jpn. Appl. Phys. 36 (1997) 5908.
11. D. S. Shin, Y. H. Han and Y. T. Kim: SSDM'97, Hamamatsu, Japan, 1997, p. 32.
12. S. L. Miller and P. L. McWhorter, J. Appl. Phys. 72 (1992) 5999.