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Volumn 75, Issue 11, 1999, Pages 1613-1615

Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; DEPOSITION; FERROELECTRIC MATERIALS; LASER ABLATION; LEAKAGE CURRENTS; MAGNETIC THIN FILMS; MORPHOLOGY; SILICA; STRONTIUM COMPOUNDS; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

EID: 0032606156     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124771     Document Type: Article
Times cited : (62)

References (18)
  • 14
    • 85034178040 scopus 로고    scopus 로고
    • JCPDS File, No:30-794
    • JCPDS File, No:30-794.
  • 15
    • 85034167231 scopus 로고    scopus 로고
    • The postannealing at 650°C was adequate. For specimen annealed at 750°C, C-V curves were of the charge-injection type
    • The postannealing at 650°C was adequate. For specimen annealed at 750°C, C-V curves were of the charge-injection type.
  • 17
    • 85034166749 scopus 로고    scopus 로고
    • unpublished results
    • S.-B. Xiong (unpublished results).
    • Xiong, S.-B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.