Electrical properties of metal-HfO2-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO2 gate dielectric

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 961-964

  Chiu, Fu Chien ^a   Lin, Shun An ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; THERMODYNAMIC STABILITY; THIN FILMS;

ANNEALING TEMPERATURE; GATE DIELECTRICS; METAL-INSULATOR-SEMICONDUCTOR (MIS) CAPACITORS; SCHOTTKY EMISSION;

MISFET DEVICES;

EID: 14644426599     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.016     Document Type: Conference Paper

References (11)

1. H.S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S.-I. Nakamura, and M. Saito 1.5 nm direct-tunneling gate oxide Si MOSFET's IEEE Trans Electron Devices 43 1996 1233
2. 5 films and conventional gate dielectrics IEEE Electron Device Lett 19 1998 341
3. 2 dielectric IEEE Trans Electron Devices 44 1997 104
4. 3 with low leakage and low interface states IEDM Tech Dig 22 1998 605
5. 2films from organo-hafnium compounds Thin Solid Films 41 1977 247
6. S.M. Sze Physics of semiconductor device second ed 1981 Wiley New York
7. J.Y.M. Lee, and B.C. Lai The electrical properties of high-dielectric-constant and ferroelectric thin films for very large scale integration circuits H.S. Nalwa Ferroelectric and dielectric thin films 2002 Academic Press 1 98
8. W.J. Zhu, T.P. Ma, T. Tamagawa, J. Kim, and Y. Di Current transport in metal/hafnium oxide/silicon structure IEEE Electron Device Lett 23 2002 97
9. L. Kang, B.H. Lee, W.J. Qi, Y. Jeon, R. Nieh, and S. Gopalan Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric IEEE Electron Device Lett 21 2000 181
10. K.J. Hubbard, and D.G. Schlom Thermodynamic stability of binary oxides in contact with silicon J Mater Res 11 1996 2757
11. J. Robertson Band offsets of wide-band-gap oxides and implications for future electronic devices J Vac Sci Technol B 18 2000 1785