Characteristics of the MFIS-FET structures processed using SBT ferroelectric thin films

IEEE International Symposium on Applications of Ferroelectrics

Volumn 2, Issue , 2000, Pages 637-640

  Park, Joo Dong ^a   Kim, Ji Woong ^a   Oh, Tae Sung ^a  

^a Hong Ik University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; FERROELECTRIC MATERIALS; HYSTERESIS; MISFET DEVICES; PLATINUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS; SUBSTRATES; ZIRCONIA;

FERROELECTRIC THIN FILM; INSULATING BUFFER LAYER; LIQUID SOURCE MISTED CHEMICAL DEPOSITION;

THIN FILMS;

EID: 0034583316     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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5. 3-covered Si substrates
6. Dielectric properties of TiO2 films reactively sputtered from Ti in an RF magnetron
7. Liquid source misted chemical deposition (LSMCD)-A critical review
8. Properties of zirconium oxide thin films deposited by pulsed reactive magnetron sputtering
9. 4 devices using PISCES II-B