Characterization of Pb(Zr,Ti)O3/ZrTiO4 double layer on Si substrates for NDRO MFISFET devices

IEEE International Symposium on Applications of Ferroelectrics

Volumn 2, Issue , 2000, Pages 641-644

  Park, Jung Ho ^a   Lee, Jang Sik ^a   Kim, Chan Soo ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; MAGNETRON SPUTTERING; OPTICAL MICROSCOPY; POLARIZATION; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM COMPOUNDS;

FILM THICKNESS; LEAD ZIRCONIUM TITANATE; REMANENT POLARIZATION;

MISFET DEVICES;

EID: 0034473606     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. 2 buffer layer
2. 3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors
3. 9 memory capacitor on Si with a silicon nitride buffer
4. 2/Si structure
5. 3 films with Si substrate
6. Dielectric properties of radio frequency magnetron sputter deposited zirconium titanate-based thin films
7. 4
8. 4 films sputtered on silicon at low temperature