Postdeposition thermal annealing and material stability of 75°C hydrogenated nanocrystalline silicon plasma-enhanced chemical vapor deposition films

Journal of Applied Physics

Volumn 98, Issue 3, 2005, Pages

  Lee, Czang Ho ^a   Grant, David J ^a   Sazonov, Andrei ^a   Nathan, Arokia ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

MATERIAL STABILITY; NANOCRYSTALLINE SILICON; OXYGEN CONCENTRATION; POSTDEPOSITION THERMAL ANNEALING;

ANNEALING; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); GRAIN BOUNDARIES; HYDROGENATION; PASSIVATION; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; THIN FILMS;

NANOSTRUCTURED MATERIALS;

EID: 24044451227     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1993777     Document Type: Article

References (29)

1. S. Bae, A. K. Kalkan, S. Cheng, and S. J. Fonash, J. Vac. Sci. Technol. A 16, 1912 (1998).
2. I.-C. Cheng and S. Wagner, Appl. Phys. Lett. 80, 440 (2002).
3. C. H. Lee, D. Striakhilev, and A. Nathan, J. Vac. Sci. Technol. A 22, 991 (2004).
4. J. Meier, R. Flückiger, H. Keppner, and A. Shah, Appl. Phys. Lett. 65, 860 (1994).
5. P. Roca i Cabarrocas, R. Brenot, P. Bulkin, R. Vanderhaghen, B. Dŕvillon, and I. French, J. Appl. Phys. 86, 7079 (1999).
6. S. Vepřek, Z. Iqbal, R. O. Kühne, P. Capezzuto, F. A. Sarott, and J. K. Gimzewski, J. Phys. C 16, 6241 (1983).
7. N. Wysch, P. Torres, M. Goerlitzer, E. Vallat, U. Kroll, A. Shah, A. Poruba, and M. Vanecek, Diffus. Defect Data, Pt. B 67-68, 89 (1999).
8. F. Finger, R. Carius, T. Dylla, S. Klein, S. Okur, and M. Günes, IEE Proc.-G: Circuits, Devices Syst. 150, 300 (2003).
9. T. Matsui, A. Matsuda, and M. Kondo, Mater. Res. Soc. Symp. Proc. 808, A8.1 (2004).
10. P. Kanschat, K. Lips, R. Brüggemann, A. Hierzenberger, I. Sieber, and W. Fuhs, Mater. Res. Soc. Symp. Proc. 507, 793 (1998).
11. J. H. Yoon, J. Mater. Res. 16, 1531 (2001).
12. C. H. Lee, A. Sazonov, and A. Nathan, Mater. Res. Soc. Symp. Proc. 808, A4.17 (2004).
13. C. McArthur, M. Meitine, and A. Sazonov, Mater. Res. Soc. Symp. Proc. 769, H9.8 (2003).
14. E. Bustarret, M. A. Hachinia, and M. Brunel, Appl. Phys. Lett. 52, 1675 (1988).
15. H. P. Klug and L. E. Alexander, X-ray Diffraction Procedure (Wiley, New York, 1974).
16. S. J. Jeng, D. E. Kotecki, J. Kanicki, C. C. Parks, and J. J. Tien, Appl. Phys. Lett. 58, 1632 (1991).
17. T. Kaneko, M. Wakagi, K. I. Onisawa, and T. Minemura, Appl. Phys. Lett. 64, 1865 (1994).
18. T. Kamei, M. Fukawa, T. Nishimiya, M. Isomura, M. Kondo, and A. Matsuda, Mater. Res. Soc. Symp. Proc. 507, 867 (1998).
19. B. Y. Moon, J. H. Youn, S. H. Won, J. Jang, and S. M. Pietruszko, Mater. Res. Soc. Symp. Proc. 685E, D5.2 (2001).
20. D. Striakhilev, F. Diehl, B. Schroder, M. Scheib, and A. I. Belogorokhov, Philos. Mag. B 80, 1799 (2000).
21. S. Vignoli, A. Fontcuberta i Morral, R. Butt́, R. Meaudre, and M. Meaudre, J. Non-Cryst. Solids 299-302, 220 (2002).
22. C. Wang, M. J. Williams, and G. Lucovsky, J. Vac. Sci. Technol. A 9, 444 (1991).
23. P. Torres, Appl. Phys. Lett. 69, 1373 (1996).
24. R. Platz and S. Wagner, Appl. Phys. Lett. 73, 1236 (1998).
25. Y. Nasuno, M. Kondo, and A. Matsuda, Appl. Phys. Lett. 78, 2330 (2001).
26. S. Hamma and P. Roca i Cabarrocas, Sol. Energy Mater. Sol. Cells 69, 217 (2001).
27. P. Hapke, F. Finger, R. Carius, H. Wagner, K. Prasad, and R. Flückiger, J. Non-Cryst. Solids 164-166, 981 (1993).
28. M. Kondo, S. Yamasaki, and A. Matsuda, J. Non-Cryst. Solids 266-269, 544 (2000).
29. Y. Ziegler, H. Curtins, J. Baumann, and A. Shah, Mater. Res. Soc. Symp. Proc. 149, 81 (1989).