Highly conductive n+ hydrogenated microcrystalline silicon and its application in thin film transistors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 991-995

  Lee, Czang Ho ^a   Striakhilev, Denis ^a   Nathan, Arokia ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ETCHING; HYDROGENATION; LEAKAGE CURRENTS; OHMIC CONTACTS; OPACITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; THIN FILM TRANSISTORS; X RAY DIFFRACTION;

DOPING RATIO; DRAIN CONTACTS; HYDROGENATED MICROCRYSTALLINE SILICON; SURFACE DIFFUSION;

THIN FILMS;

EID: 3142683921     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1648674     Document Type: Conference Paper

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