SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 691-696

Low temperature (75°C) hydrogenated nanocrystalline silicon films grown by conventional plasma enhanced chemical vapor Deposition for thin film transistors

(3) Lee, Czang Ho a Sazonov, Andrei a Nathan, Arokia a

a UNIVERSITY OF WATERLOO (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HYDROGEN; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; PHOSPHORUS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

CRYSTALLINITY; DARK CONDUCTIVITY; FIELD EFFECT MOBILITY; NANOCRYSTALLINE SILICON FILMS;

FILM GROWTH;

EID: 12744256706 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (6)

References (12)

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