How do impurities affect the growth of μc-Si:H?

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 867-872

  Kamei, Toshihiro ^a   Fukawa, Makoto ^a   Nishimiya, Tatsuyuki ^a   Isomura, Masao ^a   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DESORPTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; VOLUME FRACTION;

CARRIER RECOMBINATION; HYDROGENATED SILICON;

SEMICONDUCTING SILICON;

EID: 0032662239     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)