Phase formation sequence of nickel silicides from rapid thermal annealing of Ni on 4H-SiC

Materials Science Forum

Volumn 264-268, Issue pt 2, 1998, Pages 799-804

  Madsen, L D ^a   Svedberg, E B ^a   Radamson, H H ^a   Hallin, C ^a   Hjorvarsson, B ^a   Cabral Jr , C ^a   Jordan Sweet, J L ^a   Lavoie, C ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; ELECTRIC CONDUCTIVITY OF SOLIDS; MORPHOLOGY; NICKEL; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; SPUTTER DEPOSITION; SURFACE ROUGHNESS; THERMAL EFFECTS;

ULTRAHIGH VACUUM SPUTTER DEPOSITION;

METALLIC FILMS;

EID: 0031649909     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.264-268.799     Document Type: Article

References (12)