Dependence of Cu/Ta-N/Ta metallization stability on the characteristics of low dielectric constant materials

Journal of the Electrochemical Society

Volumn 152, Issue 7, 2005, Pages

  Chang, Ching Chun ^a   JangJian, Shiu Ko ^b   Chen, J S ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ANNEALING; DIELECTRIC MATERIALS; METALLIZING; MULTILAYERS; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SILICATES; THERMODYNAMIC STABILITY;

DIELECTRIC CONSTANT MATERIALS; DIFFUSION BARRIERS; METALLIZATION STABILITY; SHEET RESISTANCES;

COPPER COMPOUNDS;

EID: 23744453872     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1921669     Document Type: Article

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