Integrity of copper-tantalum nitride metallization under different ambient conditions

Journal of the Electrochemical Society

Volumn 147, Issue 6, 2000, Pages 2312-2318

  Yap, K P ^a,b,c   Gong, H ^a   Dai, J Y ^b   Osipowicz, T ^a   Chan, L H ^c   Lahiri, S K ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER; METALLIZING; NITRIDES; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEEP SUBMICROMETER TECHNOLOGY; DIFFUSION BARRIER; IONIZED METAL PLASMA SPUTTERING METHOD; TANTALUM NITRIDE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0034205660     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393526     Document Type: Article

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