Titanium nitride diffusion barrier for copper metallization on gallium arsenide

Thin Solid Films

Volumn 445, Issue 1, 2003, Pages 112-117

  Chen, H C ^a   Tseng, B H ^b   Houng, M P ^a   Wang, Y H ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Copper diffusion; Diffusion barrier; Interfaces; Titanium nitride

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITE MATERIALS; COPPER; ENERGY DISPERSIVE SPECTROSCOPY; INTERFACES (MATERIALS); METALLIZING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

DIFFUSION BARRIERS;

TITANIUM NITRIDE;

EID: 0242271938     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01237-9     Document Type: Article

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