Ta and Ta-N diffusion barriers sputtered with various N2/Ar ratios for Cu metallization

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1522-1526

  Wang, J H ^a   Chen, L J ^a   Lu, Z C ^b   Hsiung, C S ^b   Hsieh, W Y ^b   Yew, T R ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COPPER; ELECTRIC CONDUCTIVITY OF SOLIDS; NITROGEN; PHASE TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON WAFERS; SPUTTERING; TANTALUM; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

COPPER METALLIZATION; DIFFUSION BARRIER; GLANCING-ANGLE X-RAY DIFFRACTION;

FILM GROWTH;

EID: 0035982579     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1495906     Document Type: Conference Paper

References (11)