Study of fluorine stability in fluoro-silicate glass and effects on dielectric properties

Microelectronic Engineering

Volumn 33, Issue 1-4, 1997, Pages 335-342

  Passemard, Gérard ^a   Fugier, Pascal ^b   Noel, Patrice ^b   Pires, Fabrice ^a   Demolliens, Olivier ^b  

^a STMICROELECTRONICS   (Italy)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DEGASSING; DIELECTRIC FILMS; INTERMETALLICS; PERMITTIVITY; SEMICONDUCTING FILMS; TENSILE STRENGTH; THERMODYNAMIC STABILITY; TITANIUM NITRIDE; WATER ABSORPTION;

FLUORINE STABILITY; FLUOROSILICATE GLASS (FSG) LAYERS;

SEMICONDUCTING GLASS;

EID: 0012925032     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-9317(96)00062-7     Document Type: Article

References (11)

1. D. Yu et al., Proc. IEEE VMIC (1990) 166-172..
2. T. Usami et al., Jpn. J. Appl. Phys. 33 (1994) 408-412..
3. S.M. Lee et al., Ext. Abs. Conf. SSDM (1995) 602.
4. N. Hayasaka et al., Ext. Abs. Conf. SSDM (1995) 157.
5. C.S. Pai et al., Proc. IEEE VMIC (1995) 406-408.
6. M. Miyajima et al., Proc. IEEE VMIC (1995) 391.
7. K. Musaka et al., Ext. Abs. Conf. SSDM (1993) 510.
8. S. Robles et al., J. Electrochem. Soc. 142 (2) (1995) 580.
9. H. Kudo et al., Ext. Abs. Conf. SSDM (1995) 605-607.
10. E.J. McInerney and P. Flinn, Proc. IEEE IRPS (1982) 264.
11. G. Passemard et al., Proc. IEEE DUMIC (1996) 145.