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Volumn 5722, Issue , 2005, Pages 60-71

Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers

Author keywords

Frequency response; p doping; Quantum dot; Semiconductor laser; Threshold current; Tunnel injection

Indexed keywords

ELECTRON TUNNELING; FREQUENCY RESPONSE; MOLECULAR BEAM EPITAXY; PHOSPHORUS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS;

EID: 23744445854     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.589891     Document Type: Conference Paper
Times cited : (3)

References (33)
  • 1
    • 21544475375 scopus 로고
    • Multidimensional quantum well laser and temperature dependence of its threshold current
    • Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current", Appl. Phys. Lett., Vol. 40, no. 11, 939, 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , Issue.11 , pp. 939
    • Arakawa, Y.1    Sakaki, H.2
  • 5
    • 79955987715 scopus 로고    scopus 로고
    • 0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature
    • 0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature", Appl. Phys. Lett., 80, 3482 (2002).
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 3482
    • Bhattacharya, P.1    Ghosh, S.2
  • 6
    • 1442337627 scopus 로고    scopus 로고
    • High-frequency modulation characteristics of 1.3- μm quantum dot lasers
    • S. M. Kim, Y. Wang, M. Keever, and J. S. Harris, "High-frequency modulation characteristics of 1.3- μm quantum dot lasers", IEEE Photonics Technol. Lett. 16, 377 (2004).
    • (2004) IEEE Photonics Technol. Lett. , vol.16 , pp. 377
    • Kim, S.M.1    Wang, Y.2    Keever, M.3    Harris, J.S.4
  • 8
    • 0042637913 scopus 로고    scopus 로고
    • Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
    • G. Park, O. B. Shchekin, S. Csutak, D. L. Huffaker, "Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser", Appl. Phys. Lett. 75, 3267 (1999).
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 3267
    • Park, G.1    Shchekin, O.B.2    Csutak, S.3    Huffaker, D.L.4
  • 12
    • 8644223292 scopus 로고    scopus 로고
    • Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor
    • Z. C. Xu, D. Birkedal, M. Mil, and J. M. Hvam, "Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor," Appl. Phys. Lett. 85, 3259 (2004).
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 3259
    • Xu, Z.C.1    Birkedal, D.2    Mil, M.3    Hvam, J.M.4
  • 17
    • 0002449385 scopus 로고    scopus 로고
    • Quantum dimensionality, entropy, and the modulation response of quantum dot laser
    • D. G. Deppe and D. L. Huffaker, "Quantum dimensionality, entropy, and the modulation response of quantum dot laser," Appl. Phys. Lett. 77, 3325 (2000).
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 3325
    • Deppe, D.G.1    Huffaker, D.L.2
  • 19
    • 0032072095 scopus 로고    scopus 로고
    • Temperature dependence of the threshold current density of a quantum dot laser
    • L. V. Asryan and R. A. Suris, "Temperature dependence of the threshold current density of a quantum dot laser," IEEE J. Quantum Electron. 34, 841 (1998).
    • (1998) IEEE J. Quantum Electron. , vol.34 , pp. 841
    • Asryan, L.V.1    Suris, R.A.2
  • 20
  • 23
    • 0035397518 scopus 로고    scopus 로고
    • Tunnel-injection quantum-dot laser: Ultra-high temperature stability
    • L. Asryan, and S. Luryi, "Tunnel-injection quantum-dot laser: ultra-high temperature stability," IEEE Journal of Quantum Electronics, 37, 905-910, 2001.
    • (2001) IEEE Journal of Quantum Electronics , vol.37 , pp. 905-910
    • Asryan, L.1    Luryi, S.2
  • 24
    • 0036743142 scopus 로고    scopus 로고
    • 0 1.3- μm InAs quantum-dot lasers due P-type modulation doping of the active region
    • 0 1.3- μm InAs quantum-dot lasers due P-type modulation doping of the active region," IEEE Photonic. Tech. Lett. 14, 1231 (2002).
    • (2002) IEEE Photonic. Tech. Lett. , vol.14 , pp. 1231
    • Shchekin, O.B.1    Deppe, D.G.2
  • 26
    • 3643094248 scopus 로고    scopus 로고
    • Modulation response of tunnel injection laser: Analytical approach
    • P. Rusek, M. S. Wartak, and P. Weetman, "Modulation response of tunnel injection laser: analytical approach," J. Appl. Phys. 84, 5419 (1998).
    • (1998) J. Appl. Phys. , vol.84 , pp. 5419
    • Rusek, P.1    Wartak, M.S.2    Weetman, P.3
  • 31
    • 0025263494 scopus 로고
    • Modulation-doped multi-quantum well (MD-MQW) lasers-U: Experiment
    • K. Uomi, T. Mishima, and N. Chinone, "Modulation-doped multi-quantum well (MD-MQW) lasers-U: experiment," Jpn. J. Appl. Phys., vol. 29, pp. 88-94, 1990.
    • (1990) Jpn. J. Appl. Phys. , vol.29 , pp. 88-94
    • Uomi, K.1    Mishima, T.2    Chinone, N.3
  • 32
    • 0036901858 scopus 로고    scopus 로고
    • Modulation characteristics of quantum-dot lasers: The influence of p-type doping and the electronic density of states on obtaining high speed
    • D. G. Deppe, H.Huang, and O. B. Shchekin, "Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed," IEEE J. Quantum Electron. 38, 1587 (2002).
    • (2002) IEEE J. Quantum Electron. , vol.38 , pp. 1587
    • Deppe, D.G.1    Huang, H.2    Shchekin, O.B.3
  • 33
    • 0035333762 scopus 로고    scopus 로고
    • Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique
    • G. Liu, X. Jin, and S. L. Chuang, "Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique," IEEE Photonics Technol. Lett. 13, 430 (2001).
    • (2001) IEEE Photonics Technol. Lett. , vol.13 , pp. 430
    • Liu, G.1    Jin, X.2    Chuang, S.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.