-
1
-
-
21544475375
-
Multidimensional quantum well laser and temperature dependence of its threshold current
-
Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current", Appl. Phys. Lett., Vol. 40, no. 11, 939, 1982.
-
(1982)
Appl. Phys. Lett.
, vol.40
, Issue.11
, pp. 939
-
-
Arakawa, Y.1
Sakaki, H.2
-
3
-
-
21944454760
-
1.3 μm room-temperature GaAs-based quantum-dot laser
-
D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, "1.3 μm room-temperature GaAs-based quantum-dot laser," Appl. Phys. Lett. 73, 2564 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2564
-
-
Huffaker, D.L.1
Park, G.2
Zou, Z.3
Shchekin, O.B.4
Deppe, D.G.5
-
4
-
-
0032653432
-
3.5 W CW operation of quantum dot laser
-
A. R. Kovsh, A. E. Zhukov, D. A. Livshits, A. Y. Egorov, V. M. Ustinov, M. V. Maximov, Y. G. Musikhin, N. N. Ledentsov, P. S. Kop'ev, Z. I. Alferov, and D. Bimberg, "3.5 W CW operation of quantum dot laser," Electron. Lett. 35, 1161 (1999).
-
(1999)
Electron. Lett.
, vol.35
, pp. 1161
-
-
Kovsh, A.R.1
Zhukov, A.E.2
Livshits, D.A.3
Egorov, A.Y.4
Ustinov, V.M.5
Maximov, M.V.6
Musikhin, Y.G.7
Ledentsov, N.N.8
Kop'ev, P.S.9
Alferov, Z.I.10
Bimberg, D.11
-
5
-
-
79955987715
-
0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature
-
0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature", Appl. Phys. Lett., 80, 3482 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 3482
-
-
Bhattacharya, P.1
Ghosh, S.2
-
6
-
-
1442337627
-
High-frequency modulation characteristics of 1.3- μm quantum dot lasers
-
S. M. Kim, Y. Wang, M. Keever, and J. S. Harris, "High-frequency modulation characteristics of 1.3- μm quantum dot lasers", IEEE Photonics Technol. Lett. 16, 377 (2004).
-
(2004)
IEEE Photonics Technol. Lett.
, vol.16
, pp. 377
-
-
Kim, S.M.1
Wang, Y.2
Keever, M.3
Harris, J.S.4
-
7
-
-
4344634808
-
Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
-
H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, K. M. Groom, M. Gutierrez, M. Hopkinson, J. S. Ng, J. P. R. David, R. Beanland, "Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer," Appl. Phys. Lett. 85, 704 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 704
-
-
Liu, H.Y.1
Sellers, I.R.2
Badcock, T.J.3
Mowbray, D.J.4
Skolnick, M.S.5
Groom, K.M.6
Gutierrez, M.7
Hopkinson, M.8
Ng, J.S.9
David, J.P.R.10
Beanland, R.11
-
8
-
-
0042637913
-
Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
-
G. Park, O. B. Shchekin, S. Csutak, D. L. Huffaker, "Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser", Appl. Phys. Lett. 75, 3267 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 3267
-
-
Park, G.1
Shchekin, O.B.2
Csutak, S.3
Huffaker, D.L.4
-
12
-
-
8644223292
-
Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor
-
Z. C. Xu, D. Birkedal, M. Mil, and J. M. Hvam, "Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor," Appl. Phys. Lett. 85, 3259 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 3259
-
-
Xu, Z.C.1
Birkedal, D.2
Mil, M.3
Hvam, J.M.4
-
13
-
-
0031108828
-
InGaAs-GaAs quantum dot lasers
-
D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Z. I. ALferov, P. S. Kopev, and V. M. Ustinov, "InGaAs-GaAs quantum dot lasers," IEEE J. Sel. Topic. Quantum Electron. 3, 196 (1997).
-
(1997)
IEEE J. Sel. Topic. Quantum Electron.
, vol.3
, pp. 196
-
-
Bimberg, D.1
Kirstaedter, N.2
Ledentsov, N.N.3
Alferov, Z.I.4
Kopev, P.S.5
Ustinov, V.M.6
-
14
-
-
3042849120
-
High-power 1.5 um InAs-InGaAs quantum dot lasers on GaAs substrates
-
M. V. Maksimov, Y. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Y. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil'ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Z. I. Alferov, "High-power 1.5 um InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732 (2004).
-
(2004)
Semiconductors
, vol.38
, pp. 732
-
-
Maksimov, M.V.1
Shernyakov, Y.M.2
Kryzhanovskaya, N.V.3
Gladyshev, A.G.4
Musikhin, Y.G.5
Ledentsov, N.N.6
Zhukov, A.E.7
Vasil'ev, A.P.8
Kovsh, A.R.9
Mikhrin, S.S.10
Semenova, E.S.11
Maleev, N.A.12
Nikitina, E.V.13
Ustinov, V.M.14
Alferov, Z.I.15
-
15
-
-
0344063420
-
GaNAs as strain compensating layer for 1.55 μm light emission from InAs quantum dots
-
S. Ganapathy, X. Q. Zhang, I. Suemune, K. Uesugi, H. Kumano, B. J. Kim, T. Y. Seong, "GaNAs as strain compensating layer for 1.55 μm light emission from InAs quantum dots," Jpn. J. Appl. Phys. Part 1 42, 5598 (2003).
-
(2003)
Jpn. J. Appl. Phys. Part 1
, vol.42
, pp. 5598
-
-
Ganapathy, S.1
Zhang, X.Q.2
Suemune, I.3
Uesugi, K.4
Kumano, H.5
Kim, B.J.6
Seong, T.Y.7
-
16
-
-
0032121524
-
0.6As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: Role of carrier relaxation and differential gain
-
0.6As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: Role of carrier relaxation and differential gain," IEEE Photonic. Tech. Lett. 10, 932 (1998).
-
(1998)
IEEE Photonic. Tech. Lett.
, vol.10
, pp. 932
-
-
Klotzkin, D.1
Kamath, K.2
Vineberg, K.3
Bhattacharya, P.4
Murty, R.5
Laskar, J.6
-
17
-
-
0002449385
-
Quantum dimensionality, entropy, and the modulation response of quantum dot laser
-
D. G. Deppe and D. L. Huffaker, "Quantum dimensionality, entropy, and the modulation response of quantum dot laser," Appl. Phys. Lett. 77, 3325 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 3325
-
-
Deppe, D.G.1
Huffaker, D.L.2
-
19
-
-
0032072095
-
Temperature dependence of the threshold current density of a quantum dot laser
-
L. V. Asryan and R. A. Suris, "Temperature dependence of the threshold current density of a quantum dot laser," IEEE J. Quantum Electron. 34, 841 (1998).
-
(1998)
IEEE J. Quantum Electron.
, vol.34
, pp. 841
-
-
Asryan, L.V.1
Suris, R.A.2
-
20
-
-
0030646544
-
Observation of the 2D - 3D growth mode transition in the InAs/GaAs system
-
M. Geiger, A. Bauknecht, F. Adler, H. Schweizer, F. Scholz, "Observation of the 2D - 3D growth mode transition in the InAs/GaAs system," J. Crystal Growth 170, 558 (1997).
-
(1997)
J. Crystal Growth
, vol.170
, pp. 558
-
-
Geiger, M.1
Bauknecht, A.2
Adler, F.3
Schweizer, H.4
Scholz, F.5
-
21
-
-
0032630959
-
In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties
-
P. Bhattacharya, K. K. Kamath, J. Singh, D. Klotzkin, J. Phillips, H-T. Jiang, N. Chervela, T. Norris, T. Sosnowski, J. Laskar, and M. R. Murty, "In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties," IEEE Trans. Electron. Devices 46, 871 (1999).
-
(1999)
IEEE Trans. Electron. Devices
, vol.46
, pp. 871
-
-
Bhattacharya, P.1
Kamath, K.K.2
Singh, J.3
Klotzkin, D.4
Phillips, J.5
Jiang, H.-T.6
Chervela, N.7
Norris, T.8
Sosnowski, T.9
Laskar, J.10
Murty, M.R.11
-
22
-
-
0024733002
-
Threshold current density of GalnAsP/InP quantum box lasers
-
Y. Miyamoto, Y. Miyake, M. Asada, and Y. Suematsu, "Threshold current density of GalnAsP/InP quantum box lasers," IEEE J. Quantum Electron. 25, 2001 (1989).
-
(1989)
IEEE J. Quantum Electron.
, vol.25
, pp. 2001
-
-
Miyamoto, Y.1
Miyake, Y.2
Asada, M.3
Suematsu, Y.4
-
23
-
-
0035397518
-
Tunnel-injection quantum-dot laser: Ultra-high temperature stability
-
L. Asryan, and S. Luryi, "Tunnel-injection quantum-dot laser: ultra-high temperature stability," IEEE Journal of Quantum Electronics, 37, 905-910, 2001.
-
(2001)
IEEE Journal of Quantum Electronics
, vol.37
, pp. 905-910
-
-
Asryan, L.1
Luryi, S.2
-
24
-
-
0036743142
-
0 1.3- μm InAs quantum-dot lasers due P-type modulation doping of the active region
-
0 1.3- μm InAs quantum-dot lasers due P-type modulation doping of the active region," IEEE Photonic. Tech. Lett. 14, 1231 (2002).
-
(2002)
IEEE Photonic. Tech. Lett.
, vol.14
, pp. 1231
-
-
Shchekin, O.B.1
Deppe, D.G.2
-
25
-
-
0043173950
-
Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers
-
P. Bhattacharya, S. Ghosh, S. Pradhan, J. Singh, Z. K. Wu, J. Urayama, K. Kim and T. B. Norris, "Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers," IEEE J. Quantum Electron. 39, 952 (2003).
-
(2003)
IEEE J. Quantum Electron.
, vol.39
, pp. 952
-
-
Bhattacharya, P.1
Ghosh, S.2
Pradhan, S.3
Singh, J.4
Wu, Z.K.5
Urayama, J.6
Kim, K.7
Norris, T.B.8
-
26
-
-
3643094248
-
Modulation response of tunnel injection laser: Analytical approach
-
P. Rusek, M. S. Wartak, and P. Weetman, "Modulation response of tunnel injection laser: analytical approach," J. Appl. Phys. 84, 5419 (1998).
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 5419
-
-
Rusek, P.1
Wartak, M.S.2
Weetman, P.3
-
27
-
-
1342303548
-
The role of Auger recombination in InAs 1.3 μm quantum dot lasers investigated using high hydrostatic pressure
-
I. P. Marko, A. D. Andreev, A. R. Adams, R. Krebs, J. P. Reithmaier, and A. Forchel, 'The role of Auger recombination in InAs 1.3 μm quantum dot lasers investigated using high hydrostatic pressure," IEEE J. Selectl. Topics Quantum Electron. 9, 1300 (2003).
-
(2003)
IEEE J. Selectl. Topics Quantum Electron.
, vol.9
, pp. 1300
-
-
Marko, I.P.1
Andreev, A.D.2
Adams, A.R.3
Krebs, R.4
Reithmaier, J.P.5
Forchel, A.6
-
29
-
-
0040374493
-
0.6As/GaAs quantum dots
-
0.6As/GaAs quantum dots," Appl. Phys. Lett. 79, 722 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 722
-
-
Ghosh, S.1
Bhattacharya, P.2
Stoner, E.3
Singh, J.4
Jiang, H.5
Nuttinck, S.6
Laskar, J.7
-
31
-
-
0025263494
-
Modulation-doped multi-quantum well (MD-MQW) lasers-U: Experiment
-
K. Uomi, T. Mishima, and N. Chinone, "Modulation-doped multi-quantum well (MD-MQW) lasers-U: experiment," Jpn. J. Appl. Phys., vol. 29, pp. 88-94, 1990.
-
(1990)
Jpn. J. Appl. Phys.
, vol.29
, pp. 88-94
-
-
Uomi, K.1
Mishima, T.2
Chinone, N.3
-
32
-
-
0036901858
-
Modulation characteristics of quantum-dot lasers: The influence of p-type doping and the electronic density of states on obtaining high speed
-
D. G. Deppe, H.Huang, and O. B. Shchekin, "Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed," IEEE J. Quantum Electron. 38, 1587 (2002).
-
(2002)
IEEE J. Quantum Electron.
, vol.38
, pp. 1587
-
-
Deppe, D.G.1
Huang, H.2
Shchekin, O.B.3
-
33
-
-
0035333762
-
Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique
-
G. Liu, X. Jin, and S. L. Chuang, "Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique," IEEE Photonics Technol. Lett. 13, 430 (2001).
-
(2001)
IEEE Photonics Technol. Lett.
, vol.13
, pp. 430
-
-
Liu, G.1
Jin, X.2
Chuang, S.L.3
|