Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique

IEEE Photonics Technology Letters

Volumn 13, Issue 5, 2001, Pages 430-432

  Liu, G ^b   Jin, X ^b   Chuang, S L ^a,b  

^a IEEE

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Linewidth enhancement factor; Optical injection; Semiconductor laser

Indexed keywords

BAND STRUCTURE; DISTRIBUTED FEEDBACK LASERS; EMISSION SPECTROSCOPY; FIBER LASERS; HETEROJUNCTIONS; LASER MODE LOCKING; OPTICAL FIBERS; PUMPING (LASER); SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; TUNING;

AMPLIFIED SPONTANEOUS EMISSION SPECTROSCOPY; ERBIUM DOPED FIBER AMPLIFIER; INJECTION LOCKING TECHNIQUE; LINEWIDTH ENHANCEMENT FACTOR;

SEMICONDUCTOR LASERS;

EID: 0035333762     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.920741     Document Type: Article

References (11)

1. Interferometric measurement of the linewidth enhancement factor of a 1.55 μm strained multi-quantum-well InGaAs/InGaAsP amplifier
2. RF-modulation measurement of linewidth enhancement factor and nonlinear gain of vertical-cavity surface-emitting lasers
3. Simple method for measuring the linewidth enhancement factor of semiconductor lasers by optical injection locking
4. Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
5. yAs long-wavelength strained quantum-well lasers
6. Locking bandwidth and relaxation oscillations of an injection-locked semiconductor laser
7. Dynamic behavior and locking of a semiconductor laser subjected to external injection
8. Amplified spontaneous emission spectroscopy in strained quantum-well lasers
9. Theoretical linewidth enhancement factor alpha of GaInAs/GaInAsP/InP strained-quantum-well structures
10. Enhancement of modulation bandwidth in semiconductor quantum-well lasers by injection locking
11. Characterization of fundamental parameters of a semiconductor laser with an injected optical probe