Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process

Journal of Electronic Materials

Volumn 28, Issue 12, 1999, Pages 1420-1423

  Breitschädel, Oliver ^a   Kuhn, Bertram ^a   Scholz, Ferdinand ^a   Schweizer, Heinz ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; HETEROJUNCTIONS; ION BEAMS; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; ION BEAM ETCHING (IBE); SCHOTTKY CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2342668537     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0133-8     Document Type: Article

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