High-transconductance delta-doped InAs/AlSb HFET's with ultrathin silicon-doped InAs quantum well donor layer

IEEE Electron Device Letters

Volumn 19, Issue 3, 1998, Pages 83-85

  Bolognesi, C R ^a   Dvorak, M W ^a   Chow, D H ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b Hughes Aircraft Co   (United States)

Author keywords

Doping; Epitaxial growth; MODFET's

Indexed keywords

EPITAXIAL GROWTH; FABRICATION; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; ULTRATHIN SILICON;

FIELD EFFECT TRANSISTORS;

EID: 0032026429     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.661172     Document Type: Article

References (13)

1. C. R. Bolognesi, E. J. Caine, and H. Kroemer, "Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors," IEEE Electron Device Lett., vol. 15, pp. 16-18, 1994.
2. S. Subbanna, G. Tuttle, and H. Kroemer, "N-type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source," J. Electron. Mater., vol. 17, pp. 297-303, 1988.
3. A. Furukawa and M. Mizuta, "Heterojunction bipolar transistor utilizing the AlGaSb/GaSb alloy system," Electron. Lett., vol. 24, p. 1378, 1988.
4. 3," Appl. Phys. Lett., vol. 56, p. 1688, 1990.
5. J. D. Werking, C. R. Bolognesi, L. D. Chang, C. Nguyen, E. L. Hu, and H. Kroemer, "High-transconductance InAs/AlSb heterojunction field-effect transistors with δ-doped AlSb upper barriers," IEEE Electron Device Lett., vol. 13, pp. 164-166, 1992.
6. A. Nakagawa, J. J. Pekarik, H. Kroemer, and J. H. English, "Deep levels in Te-doped AlSb grown by molecular beam epitaxy," Appl. Phys. Lett., vol. 57, pp. 1551-1553, 1990.
7. P. Stallinga, W. Walukiewicz, E. R. Weber, P. Becla, and J. Lagowskí, "Electron-paramagnetic-resonance study of Se-doped AlSb: Evidence for negative U of the DX center," Phys. Rev. B, vol. 52, pp. R8609-R8612, 1995.
8. X. Li, K. F. Longenbach, Y. Wang, and W. I. Wang, "High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors," IEEE Electron Device Lett., vol. 13, pp. 192-194, 1992.
9. C. R. Bolognesi, J. E. Bryce, and D. H. Chow, "InAs channel heterostructure field-effect transistors with InAs/AlSb short-period super-lattice barriers," Appl. Phys. Lett., vol. 69, pp. 3531-3533, 1996.
10. 1-yas quantum wells," Jpn. J. Appl. Phys., vol. 26, pp. 263-266, 1987.
11. S. Sasa, Y. Yamamoto, S. Izumiya, M. Yano, Y. Iwai, and M. Inoue, "Increased electron concentration in InAs/AlGaSb heterostructures using a Si planar doped ultrathin InAs quantum well," Jpn. J. Appl. Phys., vol. 36, pp. 1869-1871, 1997.
12. C. R. Bolognesi, J. D. Werking, E. J. Caine, E. L. Hu, and H. Kroemer, "Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor," IEEE Electron Device Lett., vol. 14, pp. 13-15, 1993.
13. B. Brar and H. Kroemer, "Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors," IEEE Electron Device Lett., vol. 17, 1996.