MMIC Compatible AlSb/InAs HEMT with Stable AlGaSb Buffer Layers

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 276-280

  Tsai, R ^a   Barsky, M ^a   Lee, J ^a   Boos, J B ^b   Bennett, B R ^b   Magno, R ^b   Namba, C ^a   Liu, P H ^a   Gutierrez, A ^a   Lai, R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BUFFER LAYERS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0242270758     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J. B. Boos, et. al., "AlSb/InAs HEMTs for low-voltage, high-speed applications", IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 1869-1875, Sept. 1998.
2. B. R. Bennett, et. al., "Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers",Appl. Phys. Lett., vol. 72, no. 10, 1998.
3. J. B. Boos, et. al., "0.1-μm AlSb/InAs HEMTs with InAs subchannel", Electronic Lett., vol. 34, no. 15, pp. 1525-1526, July 1998.
4. J. B. Boos, et. al., "AlSb/InAs HEMTs with a TiW/Au gate metalization", Proceedings 2001 International Conf. InP and Rel. Materials, pp. 460-463
5. C. R. Bolognesi, et. al., "Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors", IEEE Electron Device Lett., vol. 15, no. 1, pp. 16-18, Jan. 1994.