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Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 224-228

Heuristic rules for group IV dopant site selection in III-V compounds

(3) Venkatasubramanian, R a Dorsey, Donald L b Mahalingam, K b

a University of Nevada Las Vegas (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; HEURISTIC METHODS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

DOPANT SITE SELECTION;

SEMICONDUCTOR DOPING;

EID: 17144447436 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00965-7 Document Type: Article

Times cited : (15)

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