Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 341-342

  Zhao, Y ^a   Jurkovic, M J ^a   Wang, W I ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2342527570     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658855     Document Type: Article

References (14)

1. Y. Zhao, M. J. Jurkovic, and W. I. Wang, "Enhancement-mode InAs n-channel high electron mobility transistors using beryllium sheet doping," Solid-State Electron., to be published 1997.
2. J. B. Boos, W. Kruppa, D. Park, B. Molnar, and B. R. Bennett, "AlSb/InAs HEMT's with high transconductance and negligible kink effect," Electron. Lett., vol. 32, pp. 688-689, 1996.
3. C. R. Bolognesi, E. J. Caine, and H. Kroemer, "Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors," IEEE Electron Device Lett., vol. 15, pp. 16-18, 1994.
4. X. Li, K. F. Longenbach, Y. Wang, and W. I. Wang, "High-breakdown-voltage AISbAs/InAs n-channel field-effect transistors," IEEE Electron Device Lett., vol. 13, pp. 192-1994, 1992.
5. Y. Zhao, M. J. Jurkovic, and W. I. Wang, "Characterization of AuGe-and AuTe-based ohmic contacts on InAs n-channel high electron mobility transistors," J. Electrochem. Soc., vol. 144, pp. 1067-1069, 1997.
6. N. C. Cirillo, Jr., M. S. Shur, and J. K. Abrokwah, "Inverted GaAs/AlGaAs modulation-doped field-effect transistors with extremely high transconductances," IEEE Electron Device Lett., vol. EDL-7, pp. 71-74, 1986.
7. H. I. Fujishiro, H. Tsuji, and S. Nishi, "Characterization of ultrahigh-speed pseudomorphic InGaAs/AlGaAs inverted high electron mobility transistors," Jpn. J. Appl. Phys., vol. 31, pp. 1272-1279, 1992.
8. M. Kasashima, Y. Aral, H. I. Fujishiro, H. Nakamura, and S. Nishi, "Pseudomorphic inverted HEMT suitable to low supplied voltage application," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2381-2386, 1992.
9. T. Akazaki, T. Enoki, K. Aral, and Y. Ishii, "Improving the characteristics of an InAlAs/InGaAs inverted HEMT by inserting an InAs layer into the InGaAs channel," Solid-State Electron., vol. 38, pp. 997-1000, 1995.
10. S. Sasa, Y. Yamamoto, S. Izumiya, M. Yano, Y. Iwai, and M. Inoue, "Increased electron concentration in InAs/AlGaSb heterostructures using a Si planar-doped ultrathin InAs quantum well," Jpn. J. Appl. Phys., vol. 36, pp. 1869-1871, 1997.
11. C. Nguyen, B. Brar, C. R. Bolognesi, J. J. Pekarik, H. Kroemer, and J. H. English, "Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations," J. Electron. Mater., vol. 22, pp. 255-258, 1993.
12. A. S. Brown, R. A. Metzger, J. A. Henige, L. Nguyen, M. Lui, and R. G. Wilson, "Effect of Si movement on the electrical properties of inverted AlInAs-GaInAs modulation-doped structures," Appl. Phys. Lett., vol. 59, pp. 3610-3612, 1991.
13. 1-xAs heterostructures: influence of Si-segregation on the two-dimensional electron gas," J. Cryst. Growth, vol. 111, pp. 295-299, 1991.
14. B. Brar and H. Kroemer, "Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors," IEEE Electron Device Lett., vol. 16, pp. 548-550, 1995.