Molecular beam epitaxial growth of high electron mobility InAs/AlGaAsSb deep quantum well structures

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 868-872

  Kuze, Naohiro ^a   Goto, Hiromasa ^a   Matsui, Masahiro ^a   Shibasaki, Ichiro ^a   Sakaki, Hiroyuki ^b  

^a ASAHI CHEMICAL INDUSTRY CO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

BEAM EQUIVALENT PRESSURE (BEP); FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031141005     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00975-X     Document Type: Article

References (9)

1. G. Tuttle, H. Kroemer and J.H. English, J. Appl. Phys. 65 (1989) 5239.
2. K. Yoh, T. Moriuchi, M. Yano and M. Inoue, J. Crystal Growth 111 (1991) 643.
3. S. Ideshita, A. Furukawa, Y. Mochizuki and M. Mizuta, Appl. Phys. Lett. 60 (1992) 2549.
4. H. Munekata, L. Esaki and L.L. Chang, J. Vac. Sci. Technol. B 5 (1987) 809.
5. C.R. Bolognesi, H. Kroemer and J.H. English, J. Vac. Sci. Technol. B 10 (1992) 877.
6. K. Nagase, S. Muramatsu, N. Kuze, T. Iwabuchi, A. Ichii, M. Toyama and I. Shibasaki, in: Digest of Technical Papers; Late News, Transducers '93 (1993).
7. N. Kuze, K. Nagase, S. Muramatsu, S. Miya, T. Iwabuchi, A. Ichii and I. Shibasaki, J. Crystal Growth 150 (1995) 1307.
8. N. Kuze, H. Goto, S. Miya, S. Muramatsu, M. Matsui and I. Shibasaki, Mater. Res. Soc. Symp. Proc. Vol. 399 (1996) 165.
9. J.C. Phillips, Bonds and Bands in Semiconductors (Academic Press, New York, 1973) ch. 8, Table. 8.2.