Comparison of x-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication

Journal of Electronic Materials

Volumn 28, Issue 5, 1999, Pages 553-558

  Zhang, X G ^a   Li, P ^a   Parent, D W ^a   Zhao, G ^a   Ayers, J E ^a   Jain, F C ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; X RAY DIFFRACTION;

CRITICAL LAYER THICKNESS; DISLOCATION MULTIPLICATION; FULL WIDTH AT HALF MAXIMUM METHOD; HETEROEPITAXY; LATTICE RELAXATION; METALORGANIC VAPOR PHASE EPITAXY; STRAIN METHOD; X RAY ROCKING CURVE BROADENING;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0032679861     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0111-1     Document Type: Article

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