Increased electron concentration in InAs/AlGaSb heterostructures using a Si planar doped ultrathin InAs quantum well

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1869-1871

  Sasa, Shigehiko ^a   Yamamoto, Yoshitaka ^a   Izumiya, Satoshi ^a   Yano, Mitsuaki ^a   Iwai, Yoshio ^a   Inoue, Masataka ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AlSb barrier; Electron mobility; InAs AlGaSb; MBE; Planar doping; Selectively doped structure; Two dimensional electron gas

Indexed keywords

EID: 0037623563     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1869     Document Type: Article

References (8)

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