Two-dimensional doping profile characterization of MOSFET's by Inverse modeling using I-V characteristics in the subthreshold region

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1640-1649

  Lee, Zachary K ^a   Mcllrath, Michael B ^a   Antoniadis, Dimitri A ^a  

^a USA   (United States)

Author keywords

Doping profile; Halo; Inverse modeling; MOSFET; Short channel effect; Subthreshold

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; INVERSE PROBLEMS; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; SPURIOUS SIGNAL NOISE; TWO DIMENSIONAL;

DOPING PROFILE; INVERSE MODELING; REVERSE SHORT CHANNEL EFFECT; SUBTHRESHOLD REGION;

MOSFET DEVICES;

EID: 0033169544     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777152     Document Type: Article

References (28)

1. M. Nishida and H. Onodera, "An anomalous increase of threshold voltages with shortening of the channel lengths for deeply boronimplanted N-channel MOSFET's," IEEE Trans. Electron Devices, vol. ED-28, pp. 1101-1103, Sept. 1981
2. S. Crowder, P. Rousseau, J. Snyder, J. Scott, P. Griffin, and J. Plummer, "The effect of source/drain processing on the reverse short-channel effect of deep submicron nulk and SOI nMOSFET's," in IEEE IEDM Tech. Dig.. 1995, pp. 95-427
3. M. Orlowski, C. Mazure, and F. Lau, "Submicron short-channel effects due to gate reoxidation induced lateral interstitial diffusion," in IEEE IEDM Tech. Dig.. 1987, pp. 87-632
4. C. Mazure and M. Orlowski, "Guidelines for reverse short-channel behavior," IEEE Electron Device Lett., vol. 10, pp. 556-558, Dec. 1989
5. C. Rafferty, H. Vuong, S. Eshraghi, M. Giles, M. Pinto, and S. Hillenius, "Explanation of reverse short-channel effect by defect gradients," in IEEE IEDM Tech. Dig., 1993, pp. 93-311
6. K. Nishi, H. Matsuhashi, T. Ochiai, M. Kasai, and T. Nishikawa, "Evidence of channel profile modification due to implantation damage studied by a new method, and its implication to reverse short-channel effects of NMOSFET's," in IEEE IEDM Tech. Dig., 1995, pp. 95-993
7. G.G. Shahidi, J. Warnock, S. Fischer, P. A. McFarland, A. Acovic, S. Subbanna, E. Ganin, E. Crabbe, J. Comfort, J. Y.-C. Sun, T. H. Ning, and B. Davari, IEEE Electron Device Lett., vol. 14, pp. 466-4168, Oct. 1993
8. B. Yu, C. H. J. Wann, E. D. Nowak, K. Noda, and C. Hu, "Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's," IEEE Trans. Electron Devices, vol. 44, pp. 627-634, April 1997
9. S. M. Sze, "Physics of semiconductor devices," 2nd ed. New York Wiley, 1981
10. N. Khalil, G. Nanz, R. Rios, and S. Selberherr, "A B-splines regression technique to determine one-dimensional MOS doping profiles," in Proc. ESSDERC '95, pp. 191-194.
11. P. C. Zalm, "The application of dynamic SIMS in silicon semiconducto technology," Philips J. Res., vol. 47, nos. 3-5, pp. 287-302, 1993.
12. R. N. Kleiman, M. E. O'Malley, F. H. Baumann, J. P. Garno, and G. E. Timp, "Junction delineation of 0.15-//m MOS devices using scanning capacitance microscopy," in IEEE IEDM Tech. Dig., 1997, pp. 97-691.
13. 7[13] Z. K. Lee, M. B. Mcllrath, and D. A. Antoniadis, "Inverse modeling of MOSFET's using I-V characteristics in the subthreshold region," in IEEE IEDM Tech. Dig., 1997, pp. 97-683
14. G. J. L. Ouwerling, "A problem-specific inverse method for twodimensional doping profile determination from capacitance-voltage measurements," Solid State Electron., vol. 34, no. 2, pp. 197-214, 1991
15. N. Khalil, J. Faricelli, D. Bell, and Selberherr, "The extraction of two-dimensional MOS transistor doping via inverse modeling," IEEE Electron Device Lett., vol. 16, pp. 17-19, Jan. 1995
16. R. Rios and N.D. Arora, "Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects," in IEEE IEDM Tech. Dig., 1994, pp. 94-613
17. Z. Liu, C. Hu, J. Huang, T. Chan, M. Jeng, P.K. Ko, and Y.C. Cheng, "Threshold voltage model for deep-submicrometer MOSFET's," IEEE Trans. Electron Devices, vol. 40, pp. 86-94, Jan. 1993
18. MEDICI manual, ver. 2.3.1, Technology Modeling Associates, Palo Alto, CA, 1996
19. J. M. Shannon, "DC measurement of the space charge capacitance and impurity profile beneath the gate of an MOST," Solid State Electron., vol. 14, pp. 1099-1106, 1971
20. J. R. Brews "The submicron MOSFET," in High-Speed Semiconductor Devices, S. M. Sze, Ed. New York: Wiley, 1990
21. H. Hu, J. B. Jacobs, L. T. Su, and D. A. Antoniadis, "A study of deepsubmicron MOSFET scaling based on experiment and simulation," IEEE Trans. Electron Devices, vol. 42, p. 669, 1995
22. C. De Boor, A Practical Guide to Splines. New York: Springer-Verlag, 1978
23. C. Rafferty, "Progress in predicting transient diffusion," in Proc. IEEE SISPAD, 1997, pp. 1-4
24. C. Huang, J. V. Faricelli, D. A. Antoniadis, N. A. Khalil, and R. A. Rios, "An accurate gate length extraction method for sub-quarter-micron MOSFET's," IEEE Trans. Electron Devices, vol. 43, pp. 958-964, June 1996
25. Y. Taur, D. S. Zicherman, D. R. Lombard!, P. J. Restle, C. H. Hsu, H. I. Hanafi, M. R. Wordeman, B. Davari, and G. G. Shahidi, "A new 'Shift and ratio' method for MOSFET channel-length extraction," IEEE Electron Device Lett., vol. 13, pp. 267-269, May 1992.
26. Y. Tsividis, Operation and Modeling of the MOS Transistor. Ne York: McGraw-Hill, 1987.
27. C. Lombard!, S. Manzini, A. Saporito, and M. Vanzi, "A physicall based mobility model for numerical simulation of nonplanar devices, IEEE Trans. Computer-Aided Design, vol. 7, pp. 1164-1170, Nov. 1988.
28. D. M. Caughey and R. E. Thomas, "Carrier mobilities in silico empirically related to doping and field," Proc. IEEE, vol. 55, pp 2192-2193, 1967.