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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 4, 1999, Pages 1470-1476

Barrier properties of Ta-RuO2 diffusion barrier for dynamic random access memory capacitor bottom electrodes

(1) Yoon, Dong Soo a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644452605 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (9)

References (18)

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