Investigation of Ta-RuO2 diffusion barrier for high density memory capacitor applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3059-3064

  Yoon, Dong Soo ^a   Baik, Hong Koo ^a   Lee, Sung Man ^b   Park, Chang Soo ^c   Lee, Sang In ^c  

^a Yonsei University   (South Korea)

^b Kangwon National University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000694243     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

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