Temperature-dependent current-voltage characteristics of fully processed Ba0.7Sr0.3TiO3 capacitors integrated in a silicon device

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 1 A, 1996, Pages 140-143

  Shimada, Yasuhiro ^a   Inoue, Atsuo ^a   Nasu, Toru ^a   Arita, Koji ^a   Nagano, Yoshihisa ^a   Matsuda, Akihiro ^a   Uemoto, Yasuhiro ^a   Fujii, Eiji ^a   Azuma, Masamichi ^a   Oishi, Yoshiro ^a   Hayashi, Shin Ichiro ^a   Otsuki, Tatsuo ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

BST; Conduction mechanism; Ferroelectric capacitor; Ferroelectrics

Indexed keywords

CHARGE COUPLED DEVICES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; FERROELECTRIC MATERIALS; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; TEMPERATURE MEASUREMENT; THIN FILMS;

CAPACITOR PATTERNING; FERROELECTRIC CAPACITORS; FRENKEL-POOLE EMISSION; INTEGRATION PROCESS; OHMIC CONDUCTION; SCHOTTKY MECHANISM; SILICON DEVICE;

CAPACITORS;

EID: 0029771290     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.140     Document Type: Article

References (15)

1. C. A. Paz de Araujo, L. D. McMillan, B. M. Melnick, J. D. Cuchiaro and J. F. Scott: Ferroelectrics 104 (1990) 241.
2. M. Azuma, M. Scott, E. Fujii, T. Otsuki, G. Kano and C. A. Paz de Araujo: Proc. Int. Symp. Integr. Ferroelectrics, Monterey, CA, March 1992, p. 109.
3. R. Waser and M. Klee: Proc. Int. Symp. Integr. Ferroelectrics, Colorado Springs, CO, April 1991, p. 288.
4. H. Hu and S. B. Krupanidhi: J. Mater. Res. 9 (1994) 1484.
5. T. Kuroiwa, T. Honda, H. Watarai and K. Sato: Jpn. J. Appl. Phys. 31 (1992) 3025.
6. P. Bhattacharya, T. Komeda, K.-H. Park and Y. Nishioka: Jpn. J. Appl. Phys. 32 (1993) 4103.
7. K. Abe and S. Komatsu: Jpn. J. Appl. Phys. 32 (1993) 4186.
8. K. Arita, E. Fujii, Y. Shimada, Y. Uemoto, M. Azuma, S. Hayashi, T. Nasu, A. Inoue, A. Matsuda, Y. Nagano, S. Katsu, T. Otsuki, G. Kano, L. D. McMillan and C. A. Paz de Araujo: IEICE Trans. Electron. E77-C (1994) 392.
9. K. Arita, E. Fujii, Y. Shimada, Y. Uemoto, T. Nasu, A. Inoue, A. Matsuda, T. Otsuki and N. Suzuoka: Jpn. J. Appl. Phys. 33 (1994) 5397.
10. D. Roy, C. J. Peng and S. B. Krupanidhi: Appl. Phys. Lett. 60 (1992) 2478.
11. C. J. Peng, H. Hu and S. B. Krupanidhi: Appl. Phys. Lett. 63 (1993) 1038.
12. X. Chen, A. I. Kingon, H. N. Al-Shareef, K. R. Bellur, K. Gifford and O. Auciello: Integr. Ferroelectr. 7 (1995) 291.
13. K. Abe and S. Komatsu: Jpn. J. Appl. Phys. 31 (1992) 2985.
14. P. Li and T. M. Lu: Phys. Rev. B 43 (1991) 14261.
15. G. M. Rao and S. B. Krupanidhi: J. Appl. Phys. 75 (1994) 2604.