Oxidation resistance of tantalum-ruthenium dioxide diffusion barrier for memory capacitor bottom electrodes

Applied Physics Letters

Volumn 73, Issue 3, 1998, Pages 324-326

  Yoon, Dong Soo ^a   Baik, Hong Koo ^a   Lee, Sung Man ^b   Park, Chang Soo ^c   Lee, Sang In ^c  

^a Yonsei University   (South Korea)

^b Kangwon National University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001004155     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121822     Document Type: Article

References (5)

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4. K. Kushida-Abdelghafar, M. Hiratani, K. Torii, and Y. Fujusaki, Integr. Ferroelectr. 13, 113 (1996).
5. T. Hara, T. Kitamura, M. Tanaka, T. Kobayashi, K. Sakiyama, S. Onishi, K. Ishihara, J. Kudo, Y. Kino, and N. Yamashita, J. Electrochem. Soc. 143, L264 (1996).