Microcrystalline oxide-incorporated new diffusion barrier for dynamic random access memory and ferroelectric random access memory capacitor electrode

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 5, 1997, Pages 2781-2786

  Yoon, Dong Soo ^a   Baik, Hong Koo ^a   Lee, Sung Man ^b  

^a Yonsei University   (South Korea)

^b Kangwon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CAPACITORS; ELECTRIC CONDUCTIVITY; ELECTRODES; GRAIN BOUNDARIES; MORPHOLOGY; OPTICAL MICROSCOPY; OXIDES; PROBES; RANDOM ACCESS STORAGE; SURFACES; THERMODYNAMIC STABILITY;

DIFFUSION BARRIER; FOUR POINT PROBES;

POLYCRYSTALLINE MATERIALS;

EID: 0031224155     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580823     Document Type: Article

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