Growth of thick and low-doped 4H-SiC epitaxial layers in a vertical radiant-heating VPE reactor

Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)

Volumn 138, Issue 4, 2002, Pages 18-25

  Oda, Noritaka ^a   Suzuki, Masafumi ^a   Fujino, Takayasu ^a   Okuno, Yoshihiro ^a   Yamasaki, Hiroyuki ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

4H SiC; Crystal defects; Epitaxial growth; Morphology; Roughness doping concentration

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; GASES; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES; VAPOR PHASE EPITAXY;

MIRRORLIKE MORPHOLOGY; PHOTOLUMINESCENCE SPECTROSCOPY; ROUGHNESS DOPING CONCENTRATION; VERTICAL-RADIANT HEATING REACTOR;

ELECTRIC REACTORS;

EID: 0036499331     PISSN: 04247760     EISSN: None     Source Type: Journal    
DOI: 10.1002/eej.1134     Document Type: Article

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