Improvement in electrical properties of 4H-SiC epilayers by micropipe dissociation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 10 A, 2001, Pages

  Kamata, I ^a   Tsuchida, H ^a   Jikimoto, T ^a   Izumi, K ^a  

^a Yokosuka Research Laboratory   (Japan)

Author keywords

4H SiC; I V characteristic; Micropipe dissociation; Reverse blocking performance; Schottky barrier diode

Indexed keywords

CURRENT DENSITY; DISSOCIATION; ELECTRIC PROPERTIES; SCHOTTKY BARRIER DIODES; VAPOR PHASE EPITAXY;

EPILAYERS; MICROPIPE DISSOCIATION;

SILICON CARBIDE;

EID: 0035483515     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1012     Document Type: Article

References (10)