Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5732, Issue , 2005, Pages 389-400

  Kane, Matthew H ^a,b   Strassburg, Martin ^a,d   Asghar, Ali ^a   Song, Qing ^c   Gupta, Shalini ^a   Senawiratne, Jayantha ^d   Hums, Christoph ^d,e   Haboeck, Ute ^e   Hoffmann, Axel ^e   Azamat, Dmitry ^e   Gehlhoff, Wolfgang ^e   Dietz, Nikolaus ^d   Zhang, Z John ^c   Summers, Christopher J ^b   Ferguson, Ian T ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d GEORGIA STATE UNIVERSITY   (United States)

^e TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Ferromagnetic semiconductor; GaMnN; MOCVD; Spintronics diluted magnetic semiconductor

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING FILMS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

ABSORPTION BANDS; FERROMAGNETIC SEMICONDUCTORS; GAMNN; SPINTRONICS DILUTED MAGNETIC SEMICONDUCTORS;

MAGNETIC SEMICONDUCTORS;

EID: 22044435923     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.582980     Document Type: Conference Paper

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