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Volumn 31, Issue 5, 2002, Pages 411-415

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

(9) Lee, K P a Pearton, S J a Overberg, M E a Abernathy, C R a Wilson, R G b Chu, S N G c Theodoropolou, N d Hebard, A F d Zavada, J M e

a University of Florida (United States)

b Stevenson Ranch ^* (United States)

c AGERE SYSTEMS (United States)

d Army Research Office ^* (United States)

e U S ARMY RESEARCH OFFICE (United States)

Author keywords

Dilute magnetic semiconductors; Ferromagnetism; GaN; Ion implantation

Indexed keywords

ANNEALING; ENERGY DISPERSIVE SPECTROSCOPY; FERROMAGNETISM; ION IMPLANTATION; IRON; MAGNETIC FIELD EFFECTS; MAGNETIZATION; MANGANESE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

DILUTE MAGNETIC SEMICONDUCTORS;

GALLIUM NITRIDE;

EID: 0036575142 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0093-8 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.