Impact of manganese incorporation on the structural and magnetic properties of MOCVD-grown Ga1-xMnxN

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 515-520

  Kane, Matthew H ^a,b   Asghar, Ali ^a   Strassburg, Martin ^a,d   Song, Qing ^c   Payne, Adam M ^a   Summers, Christopher J ^b   Zhang, Z John ^c   Dietz, Nikolaus ^d   Ferguson, Ian T ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d GEORGIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; MANGANESE; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRECIPITATION (CHEMICAL); SQUIDS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; DILUTED MAGNETIC SEMICONDUCTORS (DMS); GROWTH PATTERNS; PHASE PURITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 22044433365     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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