Use of ion implantation to facilitate the discovery and characterization of ferromagnetic semiconductors

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 7499-7501

  Theodoropoulou, N ^a   Hebard, A F ^a   Chu, S N G ^b   Overberg, M E ^c   Abernathy, C R ^c   Pearton, S J ^c   Wilson, R G ^d   Zavada, J M ^e  

^a University of Florida ^*  (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c University of Florida   (United States)

^d NONE

^e U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; EPITAXIALLY GROWN; FERROMAGNETIC BEHAVIORS; FERROMAGNETIC SEMICONDUCTOR; II-IV SEMICONDUCTORS; IMPLANT DAMAGE; IMPLANTED SAMPLES; MAGNETIC IMPURITY; MAGNETIC IONS; MAGNETIC PHASE; MAJORITY CARRIERS; ROOM TEMPERATURE; SECONDARY PHASIS; SEMICONDUCTING SUBSTRATES; SEMICONDUCTING SYSTEMS; SEMICONDUCTOR ELECTRONICS; SPIN DEGREES; VOLUME CONCENTRATION;

EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; GALLIUM ALLOYS; GALLIUM NITRIDE; ION IMPLANTATION; MAGNETIC PROPERTIES; MANGANESE; SILICON CARBIDE; SQUIDS; SUPERPARAMAGNETISM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

FERROMAGNETISM;

EID: 0037094691     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1452750     Document Type: Article

References (14)

1. H. Ohno, Science 281, 951 (1998). sci SCIEAS 0036-8075
2. G. A. Prinz, Science 282, 1660 (1998). sci SCIEAS 0036-8075
3. B. Lee, T. Jungwirth, and A. H. MacDonald, Phys. Rev. B 55, R3347 (1997). prb PRBMDO 0163-1829
4. D. D. Awschalom and R. K. Kawakami, Nature (London) 408, 923 (2000). nat NATUAS 0028-0836
5. D. D. Awschalom and J. M. Kikkawa, Phys. Today 52, 33 (1999). pto PHTOAD 0031-9228
6. T. Dietl, H. Ohno, F. Matsakura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000). sci SCIEAS 0036-8075
7. T. Theodoropoulou, A. F. Hebard, M. E. Overberg, C. R. Abernathy, S. J. Pearton, S. N. G. Chu, and R. G. Wilson, Appl. Phys. Lett. 78, 3475 (2001). apl APPLAB 0003-6951
8. S. J. Pearton, J. C. Zolper, R. J. Schul, and F. Ren, J. Appl. Phys. 86, R1 (1999). jap JAPIAU 0021-8979
9. P. A. Wolff, R. N. Bhatt, and A. C. Durst, J. Appl. Phys. 79, 5196 (1996). jap JAPIAU 0021-8979
10. R. N. Bhatt and X. Wan, Int. J. Mod. Phys. C 10, 1459 (1999). imc IJMPEO 0129-1831
11. R. N. Bhatt and M. Berciu, cond-mat/0011319.
12. T. Dietl and H. Ohno, Physica E (Amsterdam) 9, 185 (2001). 2by PELNFM 1386-9477
13. T. Dietl, A. Haury, and Y. Merle d'Aubigne, Phys. Rev. B 55, R3317 (1997). prb PRBMDO 0163-1829
14. N. Theodoropoulou, A. F. Hebard, M. E. Overberg, C. R. Abernathy, S. J. Pearton, S. N. G. Chu, and R. G. Wilson (unpublished).