Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 285-291

  Ohno, Hideo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B2. Magnetic materials; B2. Semiconducting III V materials; B3. Heterojunction semiconductor devices

Indexed keywords

ELECTRIC FIELD EFFECTS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; SYNTHESIS (CHEMICAL);

SPIN-DEPENDENT PHENOMENA;

MAGNETIC SEMICONDUCTORS;

EID: 0037380410     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02290-X     Document Type: Conference Paper

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